Crystal Growth and Equilibrium Crystal Shapes of Silicon in the Melt
Dr Xinbo Yang (Centre for Sustainable Energy Systems)
SOLAR SEMINAR SERIESDATE: 2013-08-01
TIME: 16:00:00 - 17:00:00
LOCATION: Graduate Teaching Room (Ian Ross Building)
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ABSTRACT:
The crystal growth and equilibrium crystal shapes, which are important in many areas of physics, materials science, and chemistry, has attracted both fundamental and technological interest. However, the crystal growth and equilibrium crystal shapes of the widely used semiconductor, silicon, have not been obtained owing to the inherent difficulty associated with experiments at high temperatures. In this work, the crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed for the first time using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112}, {100} and {110} orientations. The CGS in three-dimensional in Si melt is octahedral shape bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs, exhibit the {111} facets separated by curved interface. The innovative experimental approach also opens up the possibility of investigating the CGS and ECS of other materials in the melt.
BIO:
Dr Xinbo Yang received PhD degree in the field of crystal growth from Shanghai Institute of Ceramics, Chinese Academy of Sciences in 2010. Since Apr. 2010, he has been a Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellow in Tohoku University, Japan. He joined ANU as a research fellow in the end of 2011, and is currently an Australian Solar Institute Post-doctoral Fellow in the Centre for Sustainable Energy Systems. His research interests include laser processing for high efficiency silicon solar cells and silicon crystal growth. Since 2007, he has published and co-authored more than 30 journal papers, and authorized 3 patents.
