Optimisation of IBC solar cell diffusions, and Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes
Dr Kean Chern Fong and Dr Nicholas Grant (Centre for Sustainable Energy Systems)
SOLAR SEMINAR SERIESDATE: 2013-09-17
TIME: 16:00:00 - 17:00:00
LOCATION: Ian Ross Seminar Room
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ABSTRACT:
Speaker: Dr Kean Chern Fong
Title: Optimisation of IBC solar cell diffusions
Speaker: Dr Nicholas Grant
Title: Light enhanced hydrofluoric acid passivation for evaluating silicon bulk lifetimes
Abstract:
Photoconductance (PC) measurements of the silicon bulk lifetime Ibulk are important for two reasons, (i) to accurately determine the surface recombination velocity S and (ii) to examine impurities imbedded within silicon substrates. The most common way to measure Ibulk, is to passivate the silicon surface with a film that effectively eliminates S. In recent times, high-quality dielectric layers such as Al2O3, SiNx:H, SiCx:H, and a-Si:H have been demonstrated to provide excellent surface passiavtion (S < 5 cm/s) when deposited at low temperature (200a"400 AC) using CVD techniques. However, considering these films require complex deposition systems and elevated temperatures, a room temperature passivation technique is preferable. Chemical surface passivation fulfils this requirement. We have developed a light enhanced hydrofluoric acid surface passivation technique that provides the lowest S of any chemical solution to date and permits an accurate evaluation of the bulk lifetime.
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