An empirical model for the carrier cobility sum in silicon as a function of doping, temperature and injection level

Peiting Zheng (Centre for Sustainable Energy Systems)

SOLAR SEMINAR SERIES

DATE: 2013-10-03
TIME: 16:00:00 - 17:00:00
LOCATION: Ian Ross Seminar Room
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ABSTRACT:
In this presentation, I will present data regarding the sum of the electron and hole mobility as a function of doping, excess carrier concentration and temperature based on the contactless photoconductance measurements. I will then implement a new mobility model to describe the mobility sum from 150K to 450K.

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