Photoconductance-calibrated lifetime imaging of multi-crystalline silicon: A new calibration approach.
Kelvin Sio (Centre for Sustainable Energy Systems)
SOLAR SEMINAR SERIESDATE: 2013-10-24
TIME: 15:00:00 - 16:00:00
LOCATION: Engineering Lecture Theatre
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ABSTRACT:
We present a new approach to calibrate PL images into lifetime images based on single PL image and a calibration constant determined using PL images and quasi-steady-state photoconductance measurements of wafers with homogeneous lifetime. Our approach is based on modelling of the photoluminescence signal. A multi-crystalline wafer is used to demonstrate the difference between the conventional calibration approach, where photoluminescence signal is calibrated against quasi-steady-state photoconductance measurement, and our proposed method. The lifetime calibrated by our proposed method appears to be very consistent, in contrast with the lifetime calibrated by the conventional approach which is observed to be strongly dependent on the injection level as well as the reference area used for the calibration.
BIO:
Hang Sio received his B.E. degree from The Australian National University in 2011. Since then, he started his PhD degree in engineering at the The Australian National University. His research interest focuses on the recombination activities of crystal defects in multi-crystalline silicon material.
